| Year(s) | Researcher(s) | Concept / Invention | Timecode |
|---|---|---|---|
| 1799 | Alessandro Volta | Battery | 2:53 |
| 1831 | Michael Faraday | Induction | 4:13 |
| 1833 | Michael Faraday | Semiconductors, Wheatstone Bridge | 6:16 |
| 1877 | Karl Braun | Rectification at Contact | 9:11 |
| 1879 | Edwin Hall | Hall Effect, + and - Conduction | 11:00 |
| 1906 | Greenleaf Pickard | Silicon Point Contact Detector | 14:44 |
| 1907-1911 | Karl Baedeker | Controlled Doping of Semiconductor | 19:21 |
| 1920s | Home Crystal Sets | 24:13 | |
| 1925 | Julius Lilienfeld | MESFET | 28:43 |
| 1928 | Julius Lilienfeld | MOSFET | 34:15 |
| 1928-1931 | Felix Bloch Rudolf Peierls Alan Wilson Wolfgang Pauli Werner Heisenberg |
Band Picture | 36:36 |
| 1939 | WWII began | 41:03 | |
| 1940-1946 | MIT Rad Lab | 41:14 | |
| 1941 | Rad Lab | 42:41 | |
| 1942 | Walter Schottky | Barrier Theory & Experiment | 45:07 |
| 1948 | John Bardeen Walter Brattain |
Point-Contact Transistor | 48:37 |
| 1948 | John Bardeen | Metal Semiconductor Contact, Minority Carrier Injection | 52:15 |
| 1948 | William Shockley | Junction Transistor | 53:18 |
| 1952 | Jacques Pankove | Indium-alloy Transistors | 54:48 |
| 1953 | Philco | 56:49 | |
| 1955 | Lincoln Derick Carl Frosch |
Oxide Masking | 59:15 |
| 1956 | Morris Tannenbaum D. E. Thomas Charles Lee |
Diffused Silicon Transistor | 1:00:35 |
| 1954 | PSI | 1:03:06 | |
| 1957 | Fairchild | 1:05:00 | |
| 1959 | Jack Kilby | All-Semiconductor Circuit | 1:07:02 |
| 1959 | Jean Hoerni | Planar Process | 1:08:18 |
| 1959 | Robert Noyce | Integrated Circuit | 1:09:55 |
| 1960 | Dawon Kahng Mohamed Atalla |
working MOSFET | 1:10:12 |
| 1963 | Frank Wanlass | CMOS | 1:11:19 |
| 1965 | Robert Dennard | DRAM (Dynamic Random Access Memory) | 1:13:25 |
| 1965 | Carver Mead | working MESFET | 1:14:15 |
| 1965 | Moore's Law | 1:14:59 | |
| Summary Slide | 1:16:16 | ||
| Q&A | 1:23:12 |